| PART |
Description |
Maker |
| CY62157DV3006 CY62157DV30L-55BVXE CY62157DV30L-55B |
8-Mbit (512K x 16) MoBL㈢ Static RAM
8-Mbit (512K x 16) MoBL? Static RAM
8-Mbit (512K x 16) MoBL垄莽 Static RAM
8-Mbit (512K x 16) MoBL Static RAM
|
Cypress Semiconductor
|
| CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| TC554001FTI-85V TC554001FI-85V |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| MSM8521CBI-48D MSM8521CBI-020 MSM8521CB-020 MSM851 |
512K X 8 STANDARD SRAM, 20 ns, PBGA48
512K x 8 Static RAM Issue 5.2 April 2001
|
MOSAIC
http://
|
| CY7C1012AV33-10BGI CY7C1012AV33-8BGI CY7C1012AV33 |
512K x 24 Static RAM 512K X 24 STANDARD SRAM, 8 ns, PBGA119
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1049BV33-25ZC CY7C1049BV33L-12VC CY7C1049BV33L |
GIGATRUE 550 CAT6 MOLDED COMPONENT, RED 5FT 512K X 8 STANDARD SRAM, 17 ns, PDSO44
512K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| IDT70V7339S IDT70V7339S200BFI IDT70V7339S133DD IDT |
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V的为512k × 18 SYNCHRONOU开户银行可切换双端口静态RAM.5V的接
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 3.3V 512K x 18 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 512K X 18 DUAL-PORT SRAM, 10 ns, PQFP144
|
Integrated Device Technology, Inc.
|
